APT50M75JLLU2 050-7095 rev - 10-2001 advance technical information characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms a na volts min typ max 500 51 0.075 100 500 100 35 APT50M75JLLU2 500 51 204 30 40 465 3.72 -55 to 150 300 51 50 2500 APT50M75JLLU2 500v 51a 0.075 w caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com usa 405 s.w. columbia street bend, oregon 97702-1035 phone: (541) 382-8028 fax: (541) 388-0364 europe chemin de magret f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 power mos 7 tm power mos 7 tm is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switching losses are addressed with power mos 7 tm by significantly lowering r ds(on) and q g . power mos 7 tm combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt's patented metal gate structure. ? lower input capacitance ? increased power dissipation ? lower miller capacitance ? easier to drive ? lower gate charge, qg ? pfc "boost" configuration g k d s sot-227 g s k d isotop "ul recognized"
APT50M75JLLU2 050-7095 rev - 10-2001 advance technical information dynamic characteristics thermal characteristics symbol r q jc r q ja min typ max 0.27 40 unit c/w characteristic junction to case junction to ambient symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d[cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d[cont.] @ 25c r g = 0.6 w min typ max 5800 1200 90 145 38 66 17 14 38 5 unit pf nc ns characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d[cont.] ) reverse recovery time (i s = -i d[cont.] , dl s /dt = 100a/s) reverse recovery charge (i s = -i d[cont.] , dl s /dt = 100a/s) peak diode recovery dv / dt 5 source-drain diode ratings and characteristics unit amps volts ns c v/ns min typ max 51 204 1.3 620 14.7 8 symbol i s i sm v sd t rr q rr dv / dt 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 1.92mh, r g = 25 w , peak i l = 51a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d [ cont. ] di / dt 700a/s v r v dss t j 150 c apt reserves the right to change, without notice, the specifications and information contained herein. z q jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.3 0.1 0.05 0.01 0.005 0.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z q jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01
APT50M75JLLU2 050-7095 rev - 10-2001 advance technical information characteristic / test conditions maximum d.c. reverse voltage maximum peak repetitive reverse voltage maximum working peak reverse voltage maximum average forward current (t c = 80c, duty cycle = 0.5) rms forward current non-repetitive forward surge current (t j = 45c, 8.3ms) operating and storagetemperature range lead temperature: 0.063" from case for 10 sec. symbol v r v rrm v rwm i f (av) i f (rms) i fsm t j ,t stg t l symbol v f i rm c t characteristic / test conditions i f = 30a maximum forward voltage i f = 60a i f = 30a, t j = 150c maximum reverse leakage current v r = v r rated v r = v r rated, t j = 125c junction capacitance, v r = 200v static electrical characteristics unit volts amps c unit volts a pf min typ max 1.8 1.5 1.6 250 500 40 APT50M75JLLU2 600 30 60 320 -55 to 150 300 maximum ratings (ultrafast recovery diode) all ratings: t c = 25c unless otherwise specified. diode specifications section
APT50M75JLLU2 050-7095 rev - 10-2001 advance technical information z q jc , thermal impedance (c/w) 2.0 1.0 0.5 0.1 0.05 0.01 0.005 min typ max 50 65 50 80 155 155 410 7.5 15 100 300 5 5 400 200 unit ns amps nc volts a/s characteristic reverse recovery time, i f = 1.0a, di f /dt = -15a/s, v r = 30v, t j = 25c reverse recovery time t j = 25c i f = 30a, di f /dt = -240a/s, v r = 350v t j = 100c forward recovery time t j = 25c i f = 30a, di f /dt = 240a/s, v r = 350v t j = 100c reverse recovery current t j = 25c i f = 30a, di f /dt = -240a/s, v r = 350v t j = 100c recovery charge t j = 25c i f = 30a, di f /dt = -240a/s, v r = 350v t j = 100c forward recovery voltage t j = 25c i f = 30a, di f /dt = 240a/s, v r = 350v t j = 100c rate of fall of recovery current t j = 25c i f = 30a, di f /dt = -240a/s, v r = 350v (see figure 10) t j = 100c dynamic characteristics symbol t rr1 t rr2 t rr3 t fr1 t fr2 i rrm1 i rrm2 q rr1 q rr2 v fr1 v fr2 dim/dt thermal and mechanical characteristics characteristic / test conditions junction-to-case thermal resistance junction-to-ambient thermal resistance package weight symbol r q jc r q ja w t min typ max 0.90 20 1.06 30 unit c/w oz. gm. single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 note: duty factor d = t 1 / t 2 peak t j = p dm x z q jc + t c t 1 t 2 p dm 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 14, maximum effective transient thermal impedance, junction-to-case vs pulse duration
APT50M75JLLU2 050-7095 rev - 10-2001 advance technical information 0 0.5 1.0 1.5 2.0 2.5 10 50 100 500 1000 0 200 400 600 800 1000 -50 -25 0 25 50 75 100 125 150 0 200 400 600 800 1000 0 200 400 600 800 1000 0.01 0.05 0.1 0.5 1 5 10 50 100 200 t j = 100c v r = 350v t j = 100c v r = 350v t j = 100c v r = 350v t rr q rr q rr t rr i rrm 100 80 60 40 20 0 40 30 20 10 0 200 160 120 80 40 0 800 500 100 50 30 60a 30a 15a 30a 15a 60a t j = -55c t j = 25c t j = 100c t j = 150c 15a 30a 60a t j = 100c v r = 350v i f = 30a 1600 1200 800 400 0 2.0 1.6 1.2 0.8 0.4 0.0 2500 2000 1500 1000 500 0 25 20 15 10 5 0 v fr t fr v f , anode-to-cathode voltage (volts) di f /dt, current slew rate (amperes/sec) figure 15, forward voltage drop vs forward current figure 16, reverse recovery charge vs current slew rate di f /dt, current slew rate (amperes/sec) t j , junction temperature (c) figure 17, reverse recovery current vs current slew rate figure 18, dynamic parameters vs junction temperature di f /dt, current slew rate (amperes/sec) di f /dt, current slew rate (amperes/sec) figure 19, reverse recovery time vs current slew rate figure 20, forward recovery voltage/time vs current slew rate v r , reverse voltage (volts) figure 21, junction capacitance vs reverse voltage c j , junction capacitance t rr , reverse recovery time i rrm , reverse recovery current i f , forward current (pico-farads) (nano-seconds) (amperes) (amperes) t fr , forward recovery time k f , dynamic parameters q rr , reverse recovery charge (nano-seconds) (normalized) (nano-coulombs) v fr , forward recovery voltage (volts)
APT50M75JLLU2 050-7095 rev - 10-2001 advance technical information pearson 411 current transformer 0.5 i rrm di f /dt adjust 30 h d.u.t. +15v -15v 0v v r 4 3 1 2 5 5 0.75 i rrm t rr / q rr waveform zero 6 1 2 3 4 6 di f /dt - current slew rate, rate of forward current change through zero crossing. i f - forward conduction current i rrm - peak reverse recovery current. t rr - reverse recovery time measured from point of i f q rr - area under the curve defined by i rrm and t rr . dim/dt - maximum rate of current change during the trailing portion of t rr. current falling through zero to a tangent line { dim/dt } extrapolated through zero defined by 0.75 and 0.50 i rrm . 6 figure 22, diode reverse recovery test circuit and waveforms figure 23, diode reverse recovery waveform and definitions q rr = 1 / 2 ( t rr . i rrm ) 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) cathode drain gate r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) source changed 2/10/99 sot-227 (isotop ? ) package outline apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 isotop ? is a registered trademark of sgs thomson. "ul recognized" file no. e145592
|
